Plasma deposition device "KOBUS F.A.S.T.(R)"
Utilizing pulse functionality! It is possible to produce thin films equivalent to ALD in the same processing time as conventional CVD.
"KOBUS F.A.S.T.(R)" is a plasma deposition device for industrial ALD-level film quality. By utilizing a pulse function, it is possible to produce films equivalent to ALD (Atomic Layer Deposition) in the same processing time as conventional CVD. The process temperature ranges from 80°C to 500°C, with wafer sizes of 150mm and 200mm, and a deposition rate of 0.1nm/min to 500nm/min. 【Specifications】 ■ Process temperature: 80°C to 500°C ■ Wafer sizes: 150mm, 200mm ■ Deposition rate: 0.1nm/min to 500nm/min ■ Aspect ratio ・20:1 * You can download the English version of the catalog. * For more details, please refer to the PDF materials or feel free to contact us.
- Company：プラズマ・サーモ・ジャパン
- Price：Other
